Semiconductor Power Electronics & Display

Pulsed Laser Annealing (PLA) & Dopant Activation Calculator

1D thermal diffusion modeling, optical fluence optimization, and line-beam stepover calculator for 4H-SiC, GaN, and LTPS silicon semiconductors.

Process Parameters & Inputs

Semiconductor Substrate:

Laser Source & Wavelength ($\lambda$):

Laser Pulse Fluence ($E_d$ in $\text{J/cm}^2$):

Delivered laser energy density per pulse.

Laser Pulse Duration ($\tau$ in ns):

FWHM pulse width of the Q-switched / excimer laser.

Line Beam Overlap Pitch (%):

Spatial overlap along the stepping axis.

Calculated Engineering Metrics

Thermal Penetration Depth ($z_{\text{th}}$)

185nm

Peak Surface Temperature ($T_{\text{peak}}$)

1940°C

Dopant Electrical Activation

92.4%

Wafer Throughput Speed

18.5wph (200mm)

Toolpath & Geometry Simulation

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Engineering Methodology & Technical Notes

Pulsed Laser Annealing (PLA) in Wide-Bandgap Semiconductors: In 4H-SiC power MOSFETs and GaN high-electron-mobility transistors (HEMTs), implanted dopants (Al, P, N) require ultra-high temperatures ($> 1800^\circ\text{C}$) to heal ion implantation lattice damage and achieve high electrical sheet activation. Conventional furnace annealing at these temperatures degrades SiC surface morphology (step bunching) and decomposes GaN. Nanosecond UV pulsed laser annealing selectively heats sub-micron surface layers while the bulk substrate remains cool.

1D Thermal Diffusion & Line Beam Optics: Thermal diffusion depth is governed by $z_{\text{th}} = 2\sqrt{D \tau}$, where $D = k / (\rho C_p)$ is thermal diffusivity. Peak surface temperature scales with $T_{\text{peak}} = T_0 + \frac{2 E_d (1-R)}{\sqrt{\pi k \rho C_p \tau}}$. High beam homogenization ($> 98\%$ uniformity) and $95\%+$ stepover overlap ensure uniform crystal lattice recrystallization without ablation.